参数资料
型号: MBR60100PT
厂商: Taiwan Semiconductor Co., Ltd.
英文描述: 60.0 AMPS. Schottky Barrier Rectifiers
中文描述: 60.0安培。肖特基
文件页数: 1/2页
文件大?。?/td> 79K
代理商: MBR60100PT
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Dual rectifier construction, positive center tap
Metal silicon junction, majority carrier conduction
Low leakage current, Low power loss, High efficiency
Guardring for overvoltage protection
For use in high frequency inverters, free wheeling, and
polarity protection applications
Mechanical Data
Case:
JEDEC TO-220AB
molded plastic body
Terminals:
Plated leads, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds, 0.25" (6.35mm) from case (TO-220AB)
at terminals
Polarity:
As marked
Mounting Position:
Any
Mounting Torque:
10 in-lbs maximum
Weight:
0.08 oz., 2.24 g
MBR60100CT
Vishay Semiconductors
formerly General Semiconductor
Document Number 88892
10-May-04
www.vishay.com
1
New Product
Dual High-Voltage Schottky Rectifiers
Reverse Voltage
100V
Forward Current
60A
Max. Junction Temperature
175
°
C
TO-220AB (MBR60100CT)
0.398 (10.10)
0.382 (8.70)
0.523 (13.28)
0.507 (12.88)
0.185 (4.70)
0.169 (4.30)
0.024 (0.60)
0.018 (0.45)
0.114 (2.90)
0.106 (2.70)
0.634 (16.10)
0.618 (15.70)
0.055 (1.40)
0.047 (1.20)
0.154 (3.90)
0.138 (3.50)
0.150 (3.80)
0.139 (3.54)
0.118
(3.00) Typ.
0.067
(1.70) Typ.
0.100
(2.54) Typ.
0.331 (8.40) Typ.
0.343 (8.70) Typ.
0.200 (5.08) Typ.
0.056 (1.42)
0.064 (1.62)
0.028 (0.70)
0.035 (0.90)
0.055 (1.40)
0.049 (1.25)
0.102 (2.60)
0.087 (2.20)
1.161 (29.48)
1.105 (28.08)
0.638 (16.20)
0.598 (15.20)
Dia.
0.370 (9.40)
0.354 (9.00)
1
3
2
CASE
PIN 2
PIN 1
PIN 3
Dimensions in inches
and (millimeters)
Maximum Ratings and Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Total device
Per leg
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load per leg
Peak repetitive reverse current per leg at t
p
= 2
μ
s, 1KH
Z
Peak non-repetitive reverse surge energy per leg
(8/20
μ
s waveform)
Non-repetitive avalanche energy per leg
at 25
°
C, I
AS
= 1.0A, L = 40mH
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Typical thermal resistance per leg
Symbol
V
RRM
V
RWM
V
DC
MBR60100CT
100
100
100
60
30
Unit
V
V
V
Maximum average forward rectified current
I
F(AV)
A
I
FSM
350
A
I
RRM
1.0
A
E
RSM
25
mJ
E
AS
20
mJ
dv/dt
T
J
, T
STG
R
Θ
JC
10,000
–65 to +175
0.5
V/
μ
s
°C
°C/W
Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Maximum instantaneous
I
F
= 30A,
forward voltage per leg at
(1)
:
I
F
= 30A,
I
F
= 60A,
I
F
= 60A,
Maximum reverse current per leg
at working peak reverse voltage
Notes:
(1) Pulse test: 300
μ
s pulse width, 1% duty cycle
Symbol
Typ.
0.78
0.64
0.92
0.78
8.0
8.5
Max.
0.82
0.69
1.0
0.83
100
20
Unit
T
C
= 25°C
T
C
= 125°C
T
C
= 25°C
T
C
= 125°C
T
J
= 25°C
T
J
= 125°C
V
F
V
μ
A
mA
I
R
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